UV photoresponse of single ZnO nanowires

Y. W. Heo; B. S. Kang; L. C. Tien; D. P. Norton; F. Ren; J. R.L.A. Roche; S. J. Pearton

doi:10.1007/s00339-004-3045-8

UV photoresponse of single ZnO nanowires

Y. W. Heo
, B. S. Kang
, L. C. Tien
, D. P. Norton
, F. Ren
, J. R.L.A. Roche
, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

ZnO nanowires grown by site-selected molecular beam epitaxy (MBE) were contacted at both ends by Al/Pt/Au ohmic electrodes. The current-voltage (I-V) and photoresponse characteristics were obtained both in the dark and with ultraviolet (UV, 254 or 366 nm) illumination. The I-V characteristics are ohmic under all conditions, with nanowire conductivity under UV exposure of 0.2 Ω cm. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. The results show the high quality of material prepared by MBE and the promise of using ZnO nanowire structures for solar-blind UV detection.

Original language	English
Pages (from-to)	497-499
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	80
Issue number	3
DOIs	https://doi.org/10.1007/s00339-004-3045-8
State	Published - Feb 2005

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10.1007/s00339-004-3045-8

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title = "UV photoresponse of single ZnO nanowires",

abstract = "ZnO nanowires grown by site-selected molecular beam epitaxy (MBE) were contacted at both ends by Al/Pt/Au ohmic electrodes. The current-voltage (I-V) and photoresponse characteristics were obtained both in the dark and with ultraviolet (UV, 254 or 366 nm) illumination. The I-V characteristics are ohmic under all conditions, with nanowire conductivity under UV exposure of 0.2 Ω cm. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. The results show the high quality of material prepared by MBE and the promise of using ZnO nanowire structures for solar-blind UV detection.",

author = "Heo, \{Y. W.\} and Kang, \{B. S.\} and Tien, \{L. C.\} and Norton, \{D. P.\} and F. Ren and Roche, \{J. R.L.A.\} and Pearton, \{S. J.\}",

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TY - JOUR

T1 - UV photoresponse of single ZnO nanowires

AU - Heo, Y. W.

AU - Kang, B. S.

AU - Tien, L. C.

AU - Norton, D. P.

AU - Ren, F.

AU - Roche, J. R.L.A.

AU - Pearton, S. J.

PY - 2005/2

Y1 - 2005/2

N2 - ZnO nanowires grown by site-selected molecular beam epitaxy (MBE) were contacted at both ends by Al/Pt/Au ohmic electrodes. The current-voltage (I-V) and photoresponse characteristics were obtained both in the dark and with ultraviolet (UV, 254 or 366 nm) illumination. The I-V characteristics are ohmic under all conditions, with nanowire conductivity under UV exposure of 0.2 Ω cm. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. The results show the high quality of material prepared by MBE and the promise of using ZnO nanowire structures for solar-blind UV detection.

AB - ZnO nanowires grown by site-selected molecular beam epitaxy (MBE) were contacted at both ends by Al/Pt/Au ohmic electrodes. The current-voltage (I-V) and photoresponse characteristics were obtained both in the dark and with ultraviolet (UV, 254 or 366 nm) illumination. The I-V characteristics are ohmic under all conditions, with nanowire conductivity under UV exposure of 0.2 Ω cm. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. The results show the high quality of material prepared by MBE and the promise of using ZnO nanowire structures for solar-blind UV detection.

UR - https://www.scopus.com/pages/publications/10844227362

U2 - 10.1007/s00339-004-3045-8

DO - 10.1007/s00339-004-3045-8

M3 - Article

AN - SCOPUS:10844227362

SN - 0947-8396

VL - 80

SP - 497

EP - 499

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

UV photoresponse of single ZnO nanowires

Abstract

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