UV/ozone-process-assisted low-temperature SnO2 thin-film transistors

Bongho Jang; Won Yong Lee; Taegyun Kim; Sojeong Lee; Jaewon Jang

doi:10.23919/AM-FPD.2018.8437388

UV/ozone-process-assisted low-temperature SnO₂ thin-film transistors

Bongho Jang, Won Yong Lee, Taegyun Kim, Sojeong Lee, Jaewon Jang

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO₂ thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO₂ TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm²/Vs, which is more than 40 times higher than the field-effect mobility of SnO₂ TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×10⁵ and 2.09 V/dec, respectively.

Original language	English
Title of host publication	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9784990875350
DOIs	https://doi.org/10.23919/AM-FPD.2018.8437388
State	Published - 15 Aug 2018
Event	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan Duration: 3 Jul 2018 → 6 Jul 2018

Publication series

Name	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Country/Territory	Japan
City	Kyoto
Period	3/07/18 → 6/07/18

Access to Document

10.23919/AM-FPD.2018.8437388

Cite this

Jang, B., Lee, W. Y., Kim, T., Lee, S., & Jang, J. (2018). UV/ozone-process-assisted low-temperature SnO₂ thin-film transistors. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8437388 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2018.8437388

Jang, Bongho ; Lee, Won Yong ; Kim, Taegyun et al. / UV/ozone-process-assisted low-temperature SnO₂ thin-film transistors. AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

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title = "UV/ozone-process-assisted low-temperature SnO2 thin-film transistors",

abstract = "We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm2/Vs, which is more than 40 times higher than the field-effect mobility of SnO2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×105 and 2.09 V/dec, respectively.",

author = "Bongho Jang and Lee, {Won Yong} and Taegyun Kim and Sojeong Lee and Jaewon Jang",

note = "Publisher Copyright: {\textcopyright} 2018 FTFMD.; 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 ; Conference date: 03-07-2018 Through 06-07-2018",

year = "2018",

month = aug,

day = "15",

doi = "10.23919/AM-FPD.2018.8437388",

language = "English",

isbn = "9784990875350",

series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices",

address = "United States",

}

Jang, B, Lee, WY, Kim, T, Lee, S & Jang, J 2018, UV/ozone-process-assisted low-temperature SnO₂ thin-film transistors. in AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8437388, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018, Kyoto, Japan, 3/07/18. https://doi.org/10.23919/AM-FPD.2018.8437388

UV/ozone-process-assisted low-temperature SnO₂ thin-film transistors. / Jang, Bongho; Lee, Won Yong; Kim, Taegyun et al.
AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8437388 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - UV/ozone-process-assisted low-temperature SnO2 thin-film transistors

AU - Jang, Bongho

AU - Lee, Won Yong

AU - Kim, Taegyun

AU - Lee, Sojeong

AU - Jang, Jaewon

PY - 2018/8/15

Y1 - 2018/8/15

N2 - We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm2/Vs, which is more than 40 times higher than the field-effect mobility of SnO2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×105 and 2.09 V/dec, respectively.

AB - We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm2/Vs, which is more than 40 times higher than the field-effect mobility of SnO2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×105 and 2.09 V/dec, respectively.

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BT - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018

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Jang B, Lee WY, Kim T, Lee S, Jang J. UV/ozone-process-assisted low-temperature SnO₂ thin-film transistors. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8437388. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2018.8437388