@inproceedings{2affe12881f5458782a511fe5b953e84,
title = "UV/ozone-process-assisted low-temperature SnO2 thin-film transistors",
abstract = "We report that ultraviolet (UV) ozone post-annealing improves the performance of SnO2 thin-film transistors (TFTs) fabricated by the sol-gel method at a low temperature of 300 °C. The SnO2 TFT treated with UV ozone post-annealing (two times) shows a field-effect mobility of 0.11 cm2/Vs, which is more than 40 times higher than the field-effect mobility of SnO2 TFTs without UV ozone treatment. Further, the on/off current ratio and subthreshold swing improved to 1.83×105 and 2.09 V/dec, respectively.",
author = "Bongho Jang and Lee, \{Won Yong\} and Taegyun Kim and Sojeong Lee and Jaewon Jang",
note = "Publisher Copyright: {\textcopyright} 2018 FTFMD.; 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 ; Conference date: 03-07-2018 Through 06-07-2018",
year = "2018",
month = aug,
day = "15",
doi = "10.23919/AM-FPD.2018.8437388",
language = "English",
isbn = "9784990875350",
series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices",
address = "United States",
}