Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

Young Jin Kwon; Chang Ju Lee; Do Kywn Kim; Heon Bok Lee; Sung Ho Hahm

doi:10.1109/EDSSC.2011.6117622

Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

Young Jin Kwon, Chang Ju Lee, Do Kywn Kim, Heon Bok Lee, Sung Ho Hahm

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around 10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.

Original language	English
Title of host publication	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs	https://doi.org/10.1109/EDSSC.2011.6117622
State	Published - 2011
Event	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China Duration: 17 Nov 2011 → 18 Nov 2011

Publication series

Name	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Conference

Conference	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/Territory	China
City	Tianjin
Period	17/11/11 → 18/11/11

Keywords

laser-lift-off
vertical schottky diode

Access to Document

10.1109/EDSSC.2011.6117622

Cite this

Kwon, Y. J., Lee, C. J., Kim, D. K., Lee, H. B., & Hahm, S. H. (2011). Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 Article 6117622 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). https://doi.org/10.1109/EDSSC.2011.6117622

Kwon, Young Jin ; Lee, Chang Ju ; Kim, Do Kywn et al. / Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application. 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

@inproceedings{363045e14d1142debe24e496c1c0faee,

title = "Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application",

abstract = "We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around 10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.",

keywords = "laser-lift-off, vertical schottky diode",

author = "Kwon, {Young Jin} and Lee, {Chang Ju} and Kim, {Do Kywn} and Lee, {Heon Bok} and Hahm, {Sung Ho}",

year = "2011",

doi = "10.1109/EDSSC.2011.6117622",

language = "English",

isbn = "9781457719974",

series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",

}

Kwon, YJ, Lee, CJ, Kim, DK, Lee, HB & Hahm, SH 2011, Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117622, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 17/11/11. https://doi.org/10.1109/EDSSC.2011.6117622

Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application. / Kwon, Young Jin; Lee, Chang Ju; Kim, Do Kywn et al.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117622 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

AU - Kwon, Young Jin

AU - Lee, Chang Ju

AU - Kim, Do Kywn

AU - Lee, Heon Bok

AU - Hahm, Sung Ho

PY - 2011

Y1 - 2011

N2 - We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around 10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.

AB - We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around 10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.

KW - laser-lift-off

KW - vertical schottky diode

UR - http://www.scopus.com/inward/record.url?scp=84862951274&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2011.6117622

DO - 10.1109/EDSSC.2011.6117622

M3 - Conference contribution

AN - SCOPUS:84862951274

SN - 9781457719974

T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Y2 - 17 November 2011 through 18 November 2011

ER -

Kwon YJ, Lee CJ, Kim DK, Lee HB, Hahm SH. Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117622. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). doi: 10.1109/EDSSC.2011.6117622

Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

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