Wafer bonding between InP and Ce:YIG(CeY2Fe5O 12) using O2 plasma surface activation for an integrated optical waveguide isolator

J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, S. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.

Original languageEnglish
Title of host publicationIntegrated Optics
Subtitle of host publicationDevices, Materials, and Technologies X
DOIs
StatePublished - 2006
EventIntegrated Optics: Devices, Materials, and Technologies X - San Jose, CA, United States
Duration: 23 Jan 200625 Jan 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6123
ISSN (Print)0277-786X

Conference

ConferenceIntegrated Optics: Devices, Materials, and Technologies X
Country/TerritoryUnited States
CitySan Jose, CA
Period23/01/0625/01/06

Keywords

  • Ce:YIG
  • GGG
  • Integrated optical waveguide isolator
  • O plasma surface activation
  • Photonic integrated circuits
  • Wafer bonding

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