Wide bandgap semiconductor nanovvires for sensing applications

S. J. Pearton; B. S. Kang; Gila B.P. Gila; D. P. Norton; O. Kryliouk; F. Ren; Young Woo Heo; Chih Yang Chang; Gou Chung Chi; Wei Ming Wang; Li Chyong Chen

doi:10.1149/1.2731177

Wide bandgap semiconductor nanovvires for sensing applications

S. J. Pearton
, B. S. Kang
, Gila B.P. Gila
, D. P. Norton
, O. Kryliouk
, F. Ren
, Young Woo Heo
, Chih Yang Chang
, Gou Chung Chi
, Wei Ming Wang
, Li Chyong Chen

University of Florida
National Central University
National Taiwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Wide bandgap semiconductor nanowires are attractive for a variety of sensing purposes because of their excellent stability, large surface area, pizeo-electric nature and ability to be integrated with on-chip wireless communication systems. In this brief review, we will discuss progress in these nanowires for sensing applications.

Original language	English
Title of host publication	ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Publisher	Electrochemical Society Inc.
Pages	115-126
Number of pages	12
Edition	2
ISBN (Electronic)	9781566775519
ISBN (Print)	9781566775519
DOIs	https://doi.org/10.1149/1.2731177
State	Published - 2007
Event	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States Duration: 6 May 2007 → 10 May 2007

Publication series

Name	ECS Transactions
Number	2
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	6/05/07 → 10/05/07

Access to Document

10.1149/1.2731177

Cite this

Pearton, S. J., Kang, B. S., B.P. Gila, G., Norton, D. P., Kryliouk, O., Ren, F., Heo, Y. W., Chang, C. Y., Chi, G. C., Wang, W. M., & Chen, L. C. (2007). Wide bandgap semiconductor nanovvires for sensing applications. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 115-126). (ECS Transactions; Vol. 6, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2731177

Pearton, S. J. ; Kang, B. S. ; B.P. Gila, Gila et al. / Wide bandgap semiconductor nanovvires for sensing applications. ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. pp. 115-126 (ECS Transactions; 2).

@inproceedings{b2a069a73273418994a2c4acfda9b957,

title = "Wide bandgap semiconductor nanovvires for sensing applications",

abstract = "Wide bandgap semiconductor nanowires are attractive for a variety of sensing purposes because of their excellent stability, large surface area, pizeo-electric nature and ability to be integrated with on-chip wireless communication systems. In this brief review, we will discuss progress in these nanowires for sensing applications.",

author = "Pearton, \{S. J.\} and Kang, \{B. S.\} and \{B.P. Gila\}, Gila and Norton, \{D. P.\} and O. Kryliouk and F. Ren and Heo, \{Young Woo\} and Chang, \{Chih Yang\} and Chi, \{Gou Chung\} and Wang, \{Wei Ming\} and Chen, \{Li Chyong\}",

year = "2007",

doi = "10.1149/1.2731177",

language = "English",

isbn = "9781566775519",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "115--126",

booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",

address = "United States",

edition = "2",

note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

}

Pearton, SJ, Kang, BS, B.P. Gila, G, Norton, DP, Kryliouk, O, Ren, F, Heo, YW, Chang, CY, Chi, GC, Wang, WM & Chen, LC 2007, Wide bandgap semiconductor nanovvires for sensing applications. in ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 edn, ECS Transactions, no. 2, vol. 6, Electrochemical Society Inc., pp. 115-126, 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting, Chicago, IL, United States, 6/05/07. https://doi.org/10.1149/1.2731177

Wide bandgap semiconductor nanovvires for sensing applications. / Pearton, S. J.; Kang, B. S.; B.P. Gila, Gila et al.
ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. p. 115-126 (ECS Transactions; Vol. 6, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Pearton, S. J.

AU - Kang, B. S.

AU - B.P. Gila, Gila

AU - Norton, D. P.

AU - Kryliouk, O.

AU - Ren, F.

AU - Heo, Young Woo

AU - Chang, Chih Yang

AU - Chi, Gou Chung

AU - Wang, Wei Ming

AU - Chen, Li Chyong

PY - 2007

Y1 - 2007

N2 - Wide bandgap semiconductor nanowires are attractive for a variety of sensing purposes because of their excellent stability, large surface area, pizeo-electric nature and ability to be integrated with on-chip wireless communication systems. In this brief review, we will discuss progress in these nanowires for sensing applications.

AB - Wide bandgap semiconductor nanowires are attractive for a variety of sensing purposes because of their excellent stability, large surface area, pizeo-electric nature and ability to be integrated with on-chip wireless communication systems. In this brief review, we will discuss progress in these nanowires for sensing applications.

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U2 - 10.1149/1.2731177

DO - 10.1149/1.2731177

M3 - Conference contribution

AN - SCOPUS:45749107502

SN - 9781566775519

T3 - ECS Transactions

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EP - 126

BT - ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface

PB - Electrochemical Society Inc.

T2 - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

ER -

Pearton SJ, Kang BS, B.P. Gila G, Norton DP, Kryliouk O, Ren F et al. Wide bandgap semiconductor nanovvires for sensing applications. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 ed. Electrochemical Society Inc. 2007. p. 115-126. (ECS Transactions; 2). doi: 10.1149/1.2731177

Wide bandgap semiconductor nanovvires for sensing applications

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