@inproceedings{0ad47120d2f441ea9cbaf30dcadd9952,
title = "Wideband Low-Noise-Amplifier (LNA) with Lg = 50 nm InGaAs pHEMT and wideband RF chokes",
abstract = "This paper presents a 2-stage Low-Noise-Amplifier (LNA) MMIC which provides ultra-low-noise, broad bandwidth, and high associated gain while consuming a fairly low DC power dissipation of 20 mW. The amplifier has been fabricated using Lg = 50 nm enhancement-mode (E-mode) In0.7Ga 0.3As pHEMTs on a 4-mil InP substrate. By using broad bandwidth RF chokes, the LNA exhibits an average noise figure (NF) of 1.1 dB from 4 to 24 GHz with a minimum associated gain (Ga) of 17 dB. To the knowledge of the authors, this is the first demonstration of an LNA that covers from C-band to K-band with NF < 1.1 dB. This is allowed for by combining the extremely low NF characteristics of an advanced InGaAs pHEMT with broadband RF chokes.",
keywords = "associated gain, bandwidth and RF choke, HEMT, InGaAs, Low noise amplifier, noise figure",
author = "Chen, {Peter S.} and Kim, {Dae Hyun} and Joshua Bergman and Jonathan Hacker and Berinder Brar",
year = "2011",
doi = "10.1109/MWSYM.2011.5972958",
language = "English",
isbn = "9781612847566",
series = "IEEE MTT-S International Microwave Symposium Digest",
booktitle = "2011 IEEE MTT-S International Microwave Symposium, IMS 2011",
note = "2011 IEEE MTT-S International Microwave Symposium, IMS 2011 ; Conference date: 05-06-2011 Through 10-06-2011",
}