Zn 0.9Mg 0.1O/ZnO p-n junctions grown by pulsed-laser deposition

K. Ip; Y. W. Heo; D. P. Norton; S. J. Pearton; J. R. LaRoche; F. Ren

doi:10.1063/1.1783015

Zn _0.9Mg _0.1O/ZnO p-n junctions grown by pulsed-laser deposition

K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, F. Ren

University of Florida

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Abstract

The study of electrical characteristics of Zn _0.9Mg _0.1O/ZnO p-n junctions, grown by pulsed-laser deposition on bulk, single-crystal ZnO substrate was presented. It was shown that the forward turn-on voltage of the junctions was in the range 3.6-4 V for Pt/Au metallization used for the p-Ohmic contact on Zn _0.9Mg _0.1O. It was found that an effective and reproducible route to achieving p-type material in the ZnO system was to lower the n-type background by adding mg to increase the bandgap and then to doped the ZnMgO with P at high concentrations, followed by annealing to obtain type conversion to p-type. An important step in realizing minority carrier devices in the ZnO system was also presented.

Original language	English
Pages (from-to)	1169-1171
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.1783015
State	Published - 16 Aug 2004

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abstract = "The study of electrical characteristics of Zn 0.9Mg 0.1O/ZnO p-n junctions, grown by pulsed-laser deposition on bulk, single-crystal ZnO substrate was presented. It was shown that the forward turn-on voltage of the junctions was in the range 3.6-4 V for Pt/Au metallization used for the p-Ohmic contact on Zn 0.9Mg 0.1O. It was found that an effective and reproducible route to achieving p-type material in the ZnO system was to lower the n-type background by adding mg to increase the bandgap and then to doped the ZnMgO with P at high concentrations, followed by annealing to obtain type conversion to p-type. An important step in realizing minority carrier devices in the ZnO system was also presented.",

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AU - Ip, K.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - LaRoche, J. R.

AU - Ren, F.

PY - 2004/8/16

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AB - The study of electrical characteristics of Zn 0.9Mg 0.1O/ZnO p-n junctions, grown by pulsed-laser deposition on bulk, single-crystal ZnO substrate was presented. It was shown that the forward turn-on voltage of the junctions was in the range 3.6-4 V for Pt/Au metallization used for the p-Ohmic contact on Zn 0.9Mg 0.1O. It was found that an effective and reproducible route to achieving p-type material in the ZnO system was to lower the n-type background by adding mg to increase the bandgap and then to doped the ZnMgO with P at high concentrations, followed by annealing to obtain type conversion to p-type. An important step in realizing minority carrier devices in the ZnO system was also presented.

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Zn _0.9Mg _0.1O/ZnO p-n junctions grown by pulsed-laser deposition

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